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236 The basic difference between metal-electrolyte and semiconductorelectrolyte interfaces lies primarily in the fact that the concentration of charge carriers is very low in semiconductors (see Section 2.4.1). For this reason and also because the permittivity of a semiconductor is limited, the semiconductor part of the electrical double layer at the semiconductorelectrolyte interface has a marked diffuse character with Debye lengths of the order of 10~4-10"6cm. This layer is termed the space charge region in solid-state physics. The description of the properties of this region is based on the solution of the Poisson equation (Eqs 4.3.2 and 4.3.3). For an intrinsic semiconductor where the only charge carriers are electrons and holes present in the conductivity or valence band, respectively, the result is given directly by Eq. (4.3.11) with the electrolyte concentration c replaced by the ratio n /NA, where n c is the concentration of electrons in 1 cm3 of the semiconductor in a region without an electric field (in solid-state physics, concentrations are expressed in terms of the number of particles per unit volume). For doped semiconductors, it is assumed that the charge density in the semiconductor, e.g. of type ny is p(x) = e[ne(x)-n ] (4.5.1)

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The following lab is designed to reinforce your knowledge of the content in this chapter. Please review the instructions carefully and perform the steps in the order in which they are provided. Note that unlike previous labs, this lab requires a fourth piece of equipment that is capable of generating and responding to ping packets as a minimum. You will also need to have the capability of statically configuring its IP address. If your AlcatelLucent equipment has copper (i.e., wired) Ethernet ports, a simple desktop or laptop computer is more than sufficient. If not, you will need a fourth Alcatel-Lucent 7750/7450 router with suitable connections.

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where ne(x) is the concentration of electrons and n c is the electron concentration in the absence of an electric field, practically equivalent to the concentration of electron donors in the semiconductor. This is identical to the concentration of positive ions, independent of the field in the semiconductor. It is assumed that the concentration of electron acceptors is much larger than the concentration of electron donors and of electrons and holes for the original undoped intrinsic semiconductor. It follows from Eq. (4.3.5) that (4.5.2) where <j)sc is the inner potential of the bulk of the semiconductor. The procedure on page 214 can be used to yield (4.5.3) Equation (4.5.3) gives, for (j> kT/e (4.3.12) d<l>/dx = [ekT/(2e2n e)]m(<t> with respect to Eqs (4.3.8) and - 0 SC ) = ( 0 - 0 SC )/L SC (4.5.4)

These labs are designed to be used in a controlled lab environment. Please DO NOT attempt to perform these labs in a production environment.

where Lsc is the Debye length in the semiconductor. In view of Eqs (4.3.8) and (4.5.3), where 0 0SC is replaced by the overall potential difference between the bulk semiconductor and the

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The exercises for this chapter are split into two sections. The first section creates the supporting infrastructure for services. This infrastructure is not specific to

(4.5.5)

any particular service but can support multiple services in just about any imaginable combination. The second section implements a VPLS service between the PE nodes. As noted in Lab Section 5.2 in 5, all lab exercises have been designed to fully illustrate all configuration details but with a minimum number of nodes. while a VPLS across a single pair of routers may seem trivial (see Figure 11.15), please keep in mind that a real network could potentially have dozens of routers between PE1 and PE2 and that these additional routers could span a city, a continent, or even the entire globe.

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The overall Galvani potential difference between the bulk of the semiconductor and the bulk of the electrolyte solution can be separated into three parts: Ar< = Af 0 + A|0 + Al2(j) (4.5.6) where Af$ is the potential difference between the bulk of the semiconductor and the semiconductor-electrolyte interface, A|0 is the potential difference in the compact layer (i.e. between the interface and the outer Helmholtz plane) and A 0 is the potential difference between the outer Helmholtz plane and the bulk of the electrolyte solution. Obviously,

Figure 11.15: The Service Provider Core network provides the infrastructure to connect geographically separate customer equipment in a seamless, invisible fashion.

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