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(4.5.7) where sc , Ex and Ex are the electric field strengths in the semiconductor, in the compact layer and in the diffuse layer in the electrolyte, respectively, Lx is the Debye length in the solution, dx is the thickness of the compact layer and sc, H a n d i are the permittivities of the semiconductor, compact layer and electrolyte, respectively. At sufficiently large electrolyte concentrations, the second and third terms in parentheses in Eq. (4.5.7) can be neglected. Under these conditions, the Galvani potential difference between the semiconductor and the electrolyte solution is given by the potential difference in the space charge region (diffuse layer) in the semiconductor, which also holds for larger potential differences than RTIF. The distribution of charge carriers in the space charge region of an ft-type semiconductor is shown in Fig. 4.1. It is assumed that the semiconductor contains not only electrons (majority charge carriers) but also much lower concentrations of holes (minority charge carriers). If the negative potential of an ft-type semiconductor electrode increases, then the negative charge of the electrode increases through an increase in the concentration of electrons in the interphase (accumulation layer). As the electron energy in the space charge region e(p(x) depends on the distance from the interface, the energy bands bend downwards in the direction towards the interface in the negatively charged space charge region (Fig. 4.12A). When the surface charge decreases to zero, the energy bands become horizontal. The corresponding flat-band potential A * 0 ^ is an analogy of the zero-charge potential Epzc (Fig. 4.12B). When the difference A^C0 - A* 0 ^ becomes positive, the interphase is depleted of majority charge carriers (electrons in this case) forming a



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Figure 11.15 shows the topology for this section. The VPN framework resides within the domain of a single ISP. The edge routers (PE1 and PE2) are the only ones shown explicitly, although there could be many other Provider Core (P) routers. The network cloud is a reminder that the edge routers may have a direct link or may be joined by many intervening routers. An IgP is always a necessity; we ll reuse most of the configuration from 9. The task in this section is to build SDPs (shown as dotted arrows) between the PE routers. Objective In this exercise, you will configure OSPF as the core IgP within a single domain, configure LDP, and create a full mesh of SDPs between PE routers. This creates the infrastructure to support the VPLS service in the next section. Validation You will know you have succeeded if the SDPs between the PE routers are admin and operationally Up after completing all steps, and the two customer-facing (Ethernet) ports are in access mode.





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Fig. 4.12 Dependence of concentrations of negative charge carriers ( e ) and positive charge carriers ( p ) on distance from the interface between the semiconductor (sc) and the electrolyte solution (1) in an -type semiconductor. These concentration distributions markedly differ if the semiconductor/electrolyte potential difference AfQ is (A) smaller than the flat-band potential Ar0 f b , (B) equal to the flat-band potential, (C) larger and (D) much larger than the flat-band potential. nD denotes the donor concentration. (According to Yu. V. Pleskov)

The BGP configuration from the previous chapter s exercises is not needed for this chapter. Although BGP should not interfere with these exercises, you are advised to remove it completely for the sake of simplicity and ease of debugging. The command outputs for these exercises were obtained with BGP removed.

239 depletion or Mott-Schottky layer (Fig. 4.12C). However, Eq. (4.5.5) is a simplification, as it neglects the presence of minority charge carriers, which was originally very low. The following relationship holds between the concentration of electrons and the concentration of holes np: npnc = nl (4.5.8)

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1. (Optional) Completely remove the BgP configuration on all routers. (Refer to Lab Section 10.1 in 10.)

where n0 is the concentration of electrons in the same semiconductor in the absence of impurities and of an electric field inside the semiconductor, i.e. in the corresponding intrinsic semiconductor. According to the quantum theory of semiconductors, the quantity n0 is given by the relationship n0 = -3 exp

*B:PE1# configure router *B:PE1>config>router# bgp shutdown *B:PE1>config>router# no bgp *B:PE1>config>router# exit *B:PE1#

where m e is the electron mass, h is the Planck constant and eg is the width of the forbidden band. For a sufficiently large potential increase, the charge in the interphase finally corresponds to the minority charge carriers (Fig. 4.12D). The greater the width of the forbidden band eg, the broader is the potential range A\c<j> in which the space charge region has the character of a depletion layer, i.e. is formed by ionized impurity atoms. It should be noted that the study of the properties of an electrical double layer at semiconductor electrodes corresponds to study of the cell (in the simplest formulation) M | S | electrolyte solution | M (4.5.10)

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