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internal voltage gain, One can easily show that if the conditions ri RS and ro RL hold, then the gain of the ampli er becomes approximately equal to the gain of the transistor One can therefore conclude that the actual gain of an ampli er always depends on the relative values of source and input resistance, and of output and load resistance

91 Repeat the analysis of Example 91 for the current-controlled voltage source model of Figure 91(d) What is the ampli er voltage gain Under what conditions would the gain A be equal to /RS 92 Repeat the analysis of Example 91 for the current-controlled current source model of Figure 91(a) What is the ampli er voltage gain 93 Repeat the analysis of Example 91 for the voltage-controlled current source model of Figure 91(c) What is the ampli er voltage gain

(Courtesy of Dr. Max Delbr ck.)

THE BIPOLAR JUNCTION TRANSISTOR (BJT)

( 6 2 ) 10 3

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The pn junction studied in 8 forms the basis of a large number of semiconductor devices The semiconductor diode, a two-terminal device, is the most direct application of the pn junction In this section, we introduce the bipolar junction transistor (BJT) As we did in analyzing the diode, we will introduce the physics of transistor devices as intuitively as possible, resorting to an analysis of their i -v characteristics to discover important properties and applications A BJT is formed by joining three sections of semiconductor material, each with a different doping concentration The three sections can be either a thin n region sandwiched between p + and p layers, or a p region between n and n+ layers, where the superscript plus indicates more heavily doped material The resulting BJTs are called pnp and npn transistors, respectively; we shall discuss

The McGraw Hill Companies, 2001

In Table 21, the leftmost column represents the complete color code; columns to the right of it only show the third color, since this is the only one that changes For example, a 10- resistor has the code brown-black-black, while a 100- resistor has brown-black-brown In addition to the resistance in ohms, the maximum allowable power dissipation (or power rating) is typically speci ed for commercial resistors Exceeding this power rating leads to overheating and can cause the resistor to literally burn

Figure 12.1 Occurrence of E. coli Tonr colonies in Tons cultures. Ten cultures of E. coli cells were grown from a standard inoculum in separate test tubes in the absence of phage T1, then spread on petri plates in the presence of phage T1. The resistant cells grow into colonies on the plates. We expect a uniform distribution of resistant cells if the physiological induction hypothesis is correct (a) or a great uctuation in the number of resistant cells if the random mutation hypothesis is correct (b).

up For a resistor R, the power dissipated can be expressed, with Ohm s Law substituted into equation 210, by P = V I = I 2R = V2 R (218)

That is, the power dissipated by a resistor is proportional to the square of the current owing through it, as well as the square of the voltage across it The following example illustrates how one can make use of the power rating to determine whether a given resistor will be suitable for a certain application

05 025

random sampling error. If, however, mutation occurs, the number of resistant cells among the individual cultures should vary considerably from culture to culture; the number would be related to the time that the mutation occurred during the growth of each culture. If mutation arose early, there would be many resistant cells. If it arose late, there would be relatively few resistant cells. Under physiological induction, the distribution of resistant colonies should not differ between the individual and bulk cultures. Luria and Delbr ck inoculated twenty individual cultures and one bulk culture with E. coli cells and incubated them in the absence of phage T1. Each individual culture was then spread out on a petri plate containing a very high concentration of T1 phages; ten subsamples from the bulk culture were plated in the same way. We can see from the results (table 12.1) that there was minimal variation in the number of resistant cells among the bulk culture subsamples but a very large amount of variation, as predicted for random mutation, among the individual cultures.

Determine the minimum resistor size that can be connected to a given battery without exceeding the resistor s 1 -watt power rating 4

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