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Luria and Delbr ck studied the Tonr (phage T1-resistant) mutants of a normal Tons (phage T1-sensitive) Escherichia coli strain They used an enrichment experiment, as described in chapter 7, wherein a petri plate is spread with E coli bacteria and T1 phages Normally, no bacterial colonies grow on the plate: all the bacteria are lysed However, if one of the bacterial cells is resistant to T1 phages, it produces a bacterial colony, and all descendants of this colony are T1 resistant There are two possible explanations for the appearance of T1-resistant colonies: 1 Any E coli cell may be induced to be resistant to phage T1, but only a very small number actually are That is, all cells are genetically identical, each with a very low probability of exhibiting resistance in the presence of T1 phages When resistance is induced, the cell and its progeny remain resistant 2.

hapter 9 continues the discussion of electronic devices that began in 8 with the semiconductor diode This chapter describes the operating characteristics of the two major families of electronic devices: bipolar and eld-effect transistors The rst half of 9 is devoted to a brief, qualitative discussion of the physics and operation of the bipolar junction transistor (BJT), which naturally follows the discussion of the pn junction in 8 The i-v characteristics of bipolar transistors and their operating states are presented Large-signal circuit models for the BJT are then introduced, to illustrate how one can analyze transistor circuits using basic circuit analysis methods A few practical examples are discussed to illustrate the use of the circuit models The second half of the chapter focuses on eld-effect transistors; the basic operation and i-v characteristics of enhancement- and depletion-mode MOS transistors and of junction eld-effect transistors are presented Universal curves for each of these devices and large-signal circuit models are also discussed By the end of 9, you should be able to:

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In the culture, a small number of E coli cells exist that are already resistant to phage T1; in the presence of phage T1, only these cells survive If the presumed rates of physiological induction and mutation are the same, determining which of the two mechanisms is operating is dif cult Luria and Delbr ck, however, developed a means of distinguishing between these mechanisms They reasoned as follows: If T1 resistance was physiologically induced, the relative frequency of resistant E coli cells in a culture of the normal (Tons) strain should be a constant, independent of the number of cells in the culture or the length of time that the culture has been growing If resistance was due to random mutation, the frequency of mutant (Tonr) cells would depend on when the mutations occurred In other words, the appearance of a mutant cell would be a random event.

Describe the basic operation of bipolar junction transistors Interpret BJT characteristic curves and extract large-signal model parameters from these curves Identify the operating state of a BJT from measured data and determine its operating point

Fig 344:

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If a mutation occurs early in the growth of the culture, then many cells descend from the mutant cell, and therefore many resistant colonies develop If the mutation does not occur until late in the growth of the culture, then the subsequent number of mutant cells is few Thus, if the mutation hypothesis is correct, there should be considerable uctuation from culture to culture in the number of resistant cells present ( g 121)..

Analyze simple large-signal BJT ampli ers Describe the basic operation of enhancement- and depletion-mode metal-oxide-semiconductor eld-effect transistors (MOSFETs) and of junction eld-effect transistors (JFETs) Interpret the universal curves for these devices and extract linear (small-signal) models for simple ampli ers from device curves and data sheets Identify the operating state of a eld-effect transistor from measured data and determine its operating point Analyze simple large-signal FET ampli ers

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