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Both Windows Mobile and Symbian verify that the binaries have not been tampered with using cryptographic techniques. The way the two veri cation systems work however is fundamentally different. The Symbian Signing program and platform security are discussed in more detail in 14. This section is intended only to highlight the differences between the Symbian and Windows Mobile approaches. Windows Mobile requires that each binary is checked before it is run and the code execution policy is checked to see that the executable and its dependent modules allows the execution of the code. The application will not run on the device if the policy check fails. In addition, a certain subset of functions and registry keys is classed as privileged and these cannot be called or modi ed unless the hosting process is signed with the privileged certi cate. It up to the network operator as to the strictness of the policy enforcement on the device. Symbian enforces the security when the application is installed and the strictness of the policy enforcement is determined by the Symbian licensee, though the network operator could amend the ROM image if required.



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gate has the same physics as the dual-gate SOI transistor, but it is not an SOI device One of the first publication on the dual-gate transistor concept dates back to 198459 It shows that one can obtain significant reduction of short-channel effects in a device, called XMOS, in which an excellent control of the potential in the silicon film is achieved by using a top-and-bottom gate The name of the device comes from its resemblance with the Greek letter -EUsing this configuration, better control of the channel depletion region is obtained than in a "regular" SO1 MOSFET, and, in particular, the influence of the source and drain depletion regions are kept minimal This reduces the short-channel effects by screening the source and drain field lines away from the channel More complete modeling, including Monte Carlo simulations, is presented in Ref.

Practical RF System Design. William F. Egan Copyright 2003 John Wiley & Sons, Inc. ISBN: 0-471-20023-9

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60, in which the ultimate scaling of silicon MOSFETs is explored According to that paper, the ultimate silicon device is a dualgate SO1 MOSFET with a gate length o f 30 nm, an oxide thickness of 3 nm, and a silicon film thickness of 5-20 nm Such a (simulated) device shows no short-channel effects for gate lengths larger than 70 nn, and provides transconductance values of up to 2300 mS/mm One problem with such thin devices is the splitting of the conduction band into subbands The energy minimum of the first subband controls the threshold voltage and is dependent on the silicon film thickness, according to the equation: 2 cyvT = (h2 1T/qm*t i)asi, where CaVT is the threshold uncertainty and Usi, is the silicon film thickness uncertainty The latter result is similar to the quantum61 mechanical increase of threshold voltage in ultrathin SO devices.

Fully depleted SOI MOSFETs are kncwn to have a near-ideal subthreshold slope For a slope factor of 105, a subthreshold slope of 63 mV/decade is indeed expected, but the presence of interface states brings it up to values around 66-68 mV/decade In dual-gate SOI MOSFETs, values vety close to the theoretical limit of 60 mV/ decade are expected Furthermore, this low value can be obtained for very short channel lengths provided the gate oxide thickness and the silicon film thickness are scaled accordingly Theoretical investigation shows a subthreshold slope with values lower than 63 mV/decade can be obtained for a gate length down to 01 gm if the device is designed using a scaling parameter v = L/2k, where L is the gate length, and X, called the "natural length," is equal to k sit~ito 1 4(oxtsi 520).

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