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Most effort went into strip detectors where a large degree of sophistication has been reached: single- and double-sided strip detectors with integrated capacitive coupled readout, integrated biasing circuits of various kinds have been developed. The detectors are able to withstand radiation uences in the range of 1014 cm 2 hadronic particles.4 In principle they can also be used as X-ray detectors, however, due to the large capacitance of strips (typically 1 pF/cm length) the energy resolution will be moderate. A breakthrough for X-rays has been reached with the invention of the semiconductor drift chamber by Gatti and Rehak in 1984.5 This device, originally aimed at position measurement with the help of the drift time, has revolutionized X-ray spectroscopy; in particular, through the invention of single-sided structured devices of circular geometry6 which in addition had the input transistor integrated in the device.7 The semiconductor drift chamber also initiated the development of the pn-CCD which in X-ray detection has very important advantages compared to standard CCDs which are based on MOS (metal oxide semiconductor) structures working in deep depletion mode. These earlier, still widely used types of CCDs are not discussed in detail here. Controlled drift detectors (CDDs) represent a combination of silicon drift detectors and pnCDDs. They can be operated rapidly with simultaneous good position and energy measurements. The DEPFET (depleted p-channel eld effect transistor), a new device invented in 1985 by Kemmer and Lutz,6 combines the function of detector and ampli er. It is the base structure of a new type of pixel detector under development for X-ray telescopes in astronomy. In the following, the working principles of the devices will be described while detailed descriptions and applications are postponed to later sections.

Every computer needs its own cable from a centralized hub Centralized hub, switch, or router; adapters for each computer (but they re often built in); Category 5 (6 if you re planning on using Gigabit Ethernet) cables to connect to each PC; wall plates, boxes, and other hardware if you choose to run cable through the walls

= 1.8811947, = 1.8630035,

Regardless of which nodes devices are connected to in a Sun Cluster, every disk, tape, CD-ROM, Veritas, or Sun Volume Manager Volume becomes a global device and is assigned a unique name and major/minor device number pair. Once these values are assigned, these devices appear in the /dev/global namespace and can be used as if they were local devices.

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Figure 5.3.24 Portable equipment used for the analysis of alloys (bronzes, brasses, gold) and pigments. A W anode X-ray tube is employed, working at 35 kV, 0.3 mA and a Si-PIN or Si-drift detector. The equipment is shown during measurements on gold composition of the altar of S. Ambrogio, in Milan

Summary

These commands enable and disable system devices, respectively. You can use the .asr command to determine the names to be used with this command.

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When a route is disabled, the signaling traf c for the affected subgroup is diverted to one of the remaining routes. Simultaneous failures of signaling links in a route set can disable all normal signaling routes for a relation. In Fig. 5.1-7, simultaneous failures of SLA1 and SLA4 disable both signaling routes for (X,Y). In this case, signaling is maintained by using the route SLA2 SLC1 SLA3, which does not belong to the normal route set for (X,Y). 5.1.4 Mixed Signaling Networks

You need not add an entire additional master into a presentation to add some customization. You can work in Slide Master view to add a new slide layout to the current master. For example, if you want to create a slide layout with three content placeholders, you can do so and then apply the new layout to slides in your presentation.

Figure 13.10. Images, cross sections, and electrical characteristics of exible devices that use semiconducting wires/ribbons and plastic substrates. (a) s-Si MOSFETs (Reprinted with permission from Ref. 17. Copyright 2006 IEEE.) (b) s-GaN HEMTs (Reprinted with permission from Ref. 81. Copyright 2006 IEEE.) (c) s-GaAs MESFETs.

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